The S29GL512T13DHNV10 is a 512 Mb parallel NOR flash memory using 45-nm MIRRORBIT™ technology. It operates from a single 2.7 V to 3.6 V supply and supports I/O voltages from 1.65 V to VCC. Access times are as fast as 100 ns random and 15 ns page. Features include a 512-byte programming buffer, uniform 128 KB sectors, advanced sector protection, and internal ECC. Rated for 100,000 program/erase cycles and 20-year data retention.