The S29GL01GS11TFA010 is a 1 Gb parallel NOR flash memory with a 16-bit data bus, built on 65 nm MIRRORBIT™ Eclipse technology. It operates from 2.7 V to 3.6 V, supports I/O voltages from 1.65 V to VCC, and delivers random access times as fast as 100 ns. Features include a 512-byte write buffer, advanced sector protection, internal ECC, and uniform 128 KB sectors. Qualified to AEC-Q100 Grade 2 (–40°C to +105°C), it supports 100,000 program/erase cycles.