The S29GL01GS11FHB023 is a 1 Gb MIRRORBIT™ Eclipse NOR flash memory with a 3.0 V core and I/O voltage range from 1.65 V to 3.6 V. It features a 16-bit parallel data bus, page access time as low as 15 ns, and random access time of 100 ns. The device offers a 512-byte programming buffer, 100,000 program/erase cycles per sector, and up to 20 years data retention. Advanced sector protection, internal ECC, and AEC-Q100 grade options ensure robust operation in embedded systems.