The S29GL01GS11FAIV10 is a 1 Gb parallel flash memory based on 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core and versatile I/O with voltage range from 1.65 V to 3.6 V. Random access times are 100 ns and page access as fast as 15 ns. A 16-bit data bus and 512-byte programming buffer enable efficient write operations. Advanced sector protection, internal ECC for single-bit error correction, and up to 100,000 program/erase cycles ensure robust data integrity.