The S29GL512T11TFIV30 is a 512 Mb (64 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, with page access as fast as 15 ns and random access down to 100 ns. Operating from a single 2.7 V to 3.6 V supply and supporting 1.65 V to VCC I/O, it features a 512-byte programming buffer, internal ECC, and advanced sector protection. Endurance is rated at 100,000 program/erase cycles with up to 20-year data retention.