The S29GL512T11TFIV13 is a 512 Mb (64 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, operating at 2.7 V to 3.6 V with I/O from 1.65 V to VCC. It offers random access times down to 110 ns, page access as fast as 15 ns, a 512-byte programming buffer, and ECC for data integrity. Uniform 128 KB sectors, advanced sector protection, and up to 100,000 program/erase cycles suit demanding automotive, industrial, and embedded code storage up to 105°C.