The S29GL256S10FAIV10 is a 256 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O (1.65 V to 3.6 V). It delivers random access times of 90 ns and page access times of 15 ns, and features a 512-byte programming buffer. Uniform 128 KB sector erase and internal ECC enhance data integrity. With 100,000 program/erase cycles and 20 years data retention, it is ideal for automotive, industrial, and embedded applications.