The S29GL256S10DHV023 is a 256 Mb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, featuring a 3.0 V core, I/O from 1.65 V to VCC, 16-bit data bus, 100 ns random access, 512-byte write buffer, and internal ECC for single-bit correction. Uniform 128 KB sectors, advanced sector protection, and 100,000 program/erase cycles with 20-year retention make it ideal for industrial and automotive code and data storage.