The S29GL256S10DHV020 is a 256 Mb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology with a 3.0 V core and versatile I/O (1.65 V to VCC). It features 100 ns random access, 25 ns page access, a 512-byte programming buffer, uniform 128 kB sectors, advanced sector protection, and internal ECC for single-bit error correction. Rated for –40°C to +105°C, it supports 100,000 program/erase cycles and 20-year data retention.