The S29GL256S10DHV010 is a 256 Mb parallel NOR flash memory with 65 nm MIRRORBIT™ Eclipse technology, a 3.0 V core, and versatile I/O (1.65 V to VCC). It features random access as fast as 90 ns, page mode reads at 15 ns, and a 512-byte programming buffer. Supporting single supply (2.7 V to 3.6 V), advanced sector protection, and internal ECC, it is AEC-Q100 Grade 2 qualified and offers 100,000 program/erase cycles with 20-year retention.