The S29GL256S10DHB020 is a 256 Mb parallel NOR flash memory with 3.0 V core and versatile I/O (1.65 V to VCC), based on 65 nm MIRRORBIT™ Eclipse technology. It delivers 100 ns random access, 15 ns page access, and a 512-byte programming buffer for fast writes. Supporting a single supply (2.7 V to 3.6 V), uniform 128 KB sectors, hardware ECC, and advanced sector protection, it is AEC-Q100 Grade 2 qualified for automotive and industrial use.