The S29GL256S10DHAV23 is a 256 Mb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with 3.0 V core and versatile I/O (1.65 V to VCC). It offers 100 ns random access, 15 ns page access, and a 512-byte write buffer for fast programming. Uniform 128-kbyte sectors, hardware ECC, advanced sector protection, and AEC-Q100 Grade 3 qualification ensure high reliability for automotive and industrial embedded applications.