The S29GL256S10DHA023 is a 256 Mb parallel NOR flash memory using MIRRORBIT™ Eclipse 65 nm technology. It offers random access times of 90 ns and page access as fast as 15 ns, with a versatile I/O voltage range from 1.65 V to 3.6 V. Uniform 128 KB sectors, a 512-byte programming buffer, and internal ECC for single-bit error correction enhance reliability. Operating from 2.7 V to 3.6 V, it supports automotive AEC-Q100 Grade 2 (-40°C to +105°C).