The S29GL512T11FHIV23 is a 512 Mb (64 MB) parallel MIRRORBIT™ flash memory built on 45-nm technology. It operates from a single 2.7 V to 3.6 V supply, supports versatile I/O (1.65 V to VCC), ×8/×16 data bus, and access times of 15 ns page and 100 ns random. Uniform 128 KB sector erase, 512-byte programming buffer, internal ECC, and up to 100,000 program/erase cycles ensure reliability. Extended temperature ranges and AEC-Q100 grades suit code storage and data logging.