The S29GL512T11DHV013 is a 512 Mb (64 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, with random access as fast as 100 ns and page access down to 15 ns. It features a ×8/×16 data bus, 2.7 V to 3.6 V supply, 1.65 V to VCC I/O, 512-byte programming buffer, 128 KB uniform sectors, and internal ECC for single-bit error correction. Endurance is 100,000 cycles per sector with 20-year data retention. Qualified for automotive use (AEC-Q100).