The S29GL512T11DHB010 is a 512 Mb (64 MB) MIRRORBIT™ flash memory with a 3.0 V core and I/O voltage range from 1.65 V to 3.6 V. It supports ×8/×16 data bus widths, page access times down to 15 ns, and random access times as fast as 100 ns. With a 512-byte programming buffer, automatic ECC, and uniform 128 KB sector erase, it is suited for embedded systems needing high density and robust data protection. It meets AEC-Q100 standards and offers 100,000 program/erase cycles.