The S29GL512T10TFI030 is a 512 Mb (64 MB) parallel NOR flash memory based on 45-nm MIRRORBIT™ technology. It delivers random access times as low as 100 ns and page access times of 15 ns at 3.0 V. Features include a 512-byte programming buffer, versatile I/O voltage (1.65 V to VCC), uniform 128 KB sectors, 100,000 program/erase cycles, and 20-year data retention. AEC-Q100 qualified, it is ideal for automotive, industrial, and embedded code storage and data logging.