The S29GL512T10DHI020 is a 512 Mb (64 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, operating from a single 2.7 V to 3.6 V supply with I/O voltage from 1.65 V to VCC. It offers random access as fast as 100 ns, 512-byte programming buffer, x8/x16 data bus, advanced sector protection, and internal ECC for single-bit error correction. Endurance is rated at 100,000 cycles, with 20-year data retention.