The S29GL512S11TFV010 is a 512 Mb, 3.0 V parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus, versatile I/O (1.65 V to VCC), 100 ns random access, and 15 ns page access. With a 512-byte programming buffer, 128-kbyte uniform sectors, advanced sector protection, and internal ECC for single-bit error correction, it supports 100,000 program/erase cycles and 20-year data retention.