The S29GL128P11TFI023 is a 128 Mbit, 3.0 V page-mode Flash memory built on 90 nm MirrorBit® technology. It features uniform 128 Kbyte sectors, VersatileIO™ for flexible I/O voltage from 1.65 V to VCC, and supports single-word or 32-word buffer programming. Typical endurance is 100,000 erase cycles per sector. Advanced sector protection enhances reliability. Operating from -40°C to +85°C, it suits embedded systems needing high density and performance.