The S29GL01GS11DHB010 is a 1 Gb parallel NOR flash memory based on 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O (1.65 V to VCC). It features a 16-bit data bus, asynchronous page mode read with 15 ns page access and 100 ns random access, and a 512-byte programming buffer for fast writes. Uniform 128 kB sectors, 100,000 program/erase cycles, and internal ECC provide reliability for automotive and industrial code and data storage.