The S29GL01GS11DHAV23 is a 1 Gb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core and versatile I/O (1.65 V to VCC). It offers 110 ns random access, 25 ns page mode, a 512-byte programming buffer, 128 kB uniform sectors, hardware ECC, and advanced sector protection. Qualified to AEC-Q100 Grade 2 (–40°C to +105°C), it supports 100,000 program/erase cycles and 20 years data retention.