The S29GL512S11FHB020 is a 512 Mb parallel NOR flash memory using MIRRORBIT™ Eclipse 65 nm technology. It offers random access times down to 100 ns and page access as low as 15 ns. Supporting I/O voltages from 1.65 V to 3.6 V, it features uniform 128 kbyte sectors, a 512-byte programming buffer, and single 2.7 V to 3.6 V supply. Up to 100,000 program/erase cycles and 20 years data retention are possible. Sector protection and ECC enhance reliability for automotive systems.