The S29GL064S90DHVV10 is a 64 Mb (8 MB) parallel NOR flash memory built on Infineon's 65-nm MIRRORBIT™ process. Operating from a single 3.0 V supply with I/O voltages from 1.65 V to VCC, it offers access times as fast as 70 ns. Endurance is 100,000 erase cycles per sector and 20-year data retention. Advanced sector protection, hardware ECC, and secure silicon region enhance reliability. Automotive AEC-Q100 qualification and fortified BGA packaging suit embedded applications.