The S26KS512SDGBHN030 is a 512 Mb (64 MB) HYPERFLASH™ memory with HYPERBUS™ interface, supporting DDR up to 166 MHz (333 MBps) at 1.8 V and 100 MHz (200 MBps) at 3.0 V. Sector protection, ECC with 1-bit correction and 2-bit detection, CRC, and deep power-down mode are included. AEC-Q100 Grade 1 qualification enables operation from –40°C to +125°C, with 100,000 program/erase cycles and 20-year retention.