High-Density 8 Mbit MoBL™ Parallel SRAM for Industrial Applications CY62157EV30LL-45BVXI is an 8-Mbit (512K × 16) CMOS SRAM with 45 ns access time and 2.20 V to 3.60 V supply. It targets low-power systems with typical ICC 6 mA at 1 MHz (18 mA typ at fmax) and standby ISB 2 µA typical (8 µA max). Automatic CE power-down and data retention at VDR = 1.5 V (ICCDR 8 µA max) support battery-backed memory. Pb-free 48-ball VFBGA, Industrial –40°C to +85°C.