CY7C1041G30-10BVXI is a 4-Mbit (256K × 16) asynchronous CMOS SRAM with embedded ECC for single-bit error correction. It operates from 2.2 V to 3.6 V over -40°C to 85°C and supports 10 ns address access. Byte writes use BLE/BHE; I/Os are tri-stated when deselected. Data is retained at 1.0 V. CE power-down (CMOS) standby current is 8 mA max. Supplied in a 48-ball 6 × 8 × 1.0 mm VFBGA.