CY7C1069G30-10BVXI is a 16-Mbit (2M × 8) asynchronous CMOS SRAM with embedded ECC for single-bit error correction. It supports 10 ns access time (tAA) and operates from 2.2 V to 3.6 V over -40°C to +85°C. It uses dual chip enables (CE1/CE2) with OE/WE control and three-state I/Os. At VCC max and 100 MHz, ICC is 110 mA max, and CE power-down current ISB2 is 30 mA max. It is in a 48-ball VFBGA.