CY7C1061GE18-15BV1XI is a 16-Mbit (1M × 16) fast asynchronous CMOS SRAM with embedded ECC for single-bit error correction and an ERR output to flag correction events. This 1.65 V to 2.2 V industrial-grade device (-40°C to 85°C) provides 15 ns access time. It supports byte writes via BLE/BHE and automatic CE power-down (ISB2 20 mA typ, 30 mA max). Available in a 48-ball Pb-free VFBGA package.