CY7C1061GE-10BVXI is a 16-Mbit (1M × 16) asynchronous CMOS SRAM with embedded ECC for single-bit error correction and an ERR output to flag correction events. This -10 ns industrial device operates from 4.5 V to 5.5 V, offers dual chip enables, and supports byte writes via BLE/BHE. DC specs include ICC 110 mA max at 100 MHz, ISB2 30 mA max standby, and ±1 µA I/O leakage. 65-nm process.