CY7C1061G30-10BV1XI is a 16-Mbit (1M x 16) asynchronous SRAM with embedded ECC for single-bit error correction. It operates from 2.2 V to 3.6 V and is specified for 10 ns address access. Byte writes are supported via BLE/BHE and a single chip enable, with TTL-compatible I/O. Industrial operation is -40°C to 85°C, with ICC 110 mA max at 100 MHz and ISB2 30 mA max standby. Offered in a 48-ball VFBGA.