The S29GL256S10TFIV23 is a 256 Mb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core, versatile I/O (1.65 V to 3.6 V), 16-bit data bus, random access time of 90 ns, and page access time of 15 ns. With a 512-byte programming buffer, 128 kbyte sector erase, and internal ECC, it supports 100,000 program/erase cycles and 20 years data retention. AEC-Q100 qualification enables robust code storage and fast access in automotive systems.