The S29GL256S10TFIV13 is a 256 Mb parallel NOR flash memory built on 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core, versatile I/O (1.65 V to VCC), random access times as fast as 90 ns, page access times down to 15 ns, ×16 data bus, and a 512-byte programming buffer. Automatic single-bit ECC and sector protection ensure reliability for embedded and automotive applications. Operating from -40°C to +105°C, it supports 100,000 program/erase cycles.