The S29GL256S10FHI010 is a 256 Mb parallel NOR flash memory built on Infineon's 65 nm MIRRORBIT™ Eclipse technology. It offers a 3.0 V core, versatile I/O (1.65 V to 3.6 V), 16-bit data bus, and 512-byte programming buffer. With random access times down to 90 ns and page access as low as 15 ns, it features advanced sector protection, internal ECC for single-bit error correction, and up to 100,000 program/erase cycles.