OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance. The OptiMOS™5 60V PQFN 3.3x3.3 Source-Down features 60 V and low RDS(on) of 3.0 mOhm, offering a flipped silicon die, which is positioned upside down inside of the component. This allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.