OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance. The OptiMOS™ 5 PQFN 3.3x3.3 Source-Down features 100 V and low RDS(on) of 6.5 mOhm, offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.