OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance The OptiMOS™5 30V PQFN 3.3x3.3 Source-Down features 30 V and low RDS(on) of 0.85 mOhm, offering a flipped silicon die, positioned upside down inside of the component. This allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.