OptiMOS™ n-channel power MOSFET 150V - Bare Die Infineon’s OptiMOS™ 5 power MOSFET 150V technology offers a breakthrough reduction in RDS(on) (up to 25% compared to the next best alternative in SuperSO8) and Qrr without compromising FOMgd and FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse-recovery charge (lowest Qrr in SuperSO8 = 26nC) increases commutation ruggedness.