OptiMOS™ low-voltage power MOSFET 25V in PQFN 3.3x3.3 Source-Down Center-Gate package with industry leading RDS(on) IQE006NE2LM5CG OptiMOS™ low-voltage power MOSFET Source-Down is available as a Center-Gate footprint version. Placing the gate in the middle of the footprint leads to an optimized source connection. Center-Gate footprint offers the advantage of optimized and easy parallelization of MOSFETs as it comes with a larger drain to source creepage distance, improving current capability, resulting in higher output levels.