650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode and shutdown in DSO-8 package The 2ED21844S06J is a 650V half-bridge high-current, high-speed gate driver for MOSFET and IGBT, with typical 2.5A sink and source current in a DSO-8 package. It features Infineon’s SOI technology for excellent ruggedness and noise immunity, with no parasitic thyristor structures for reliable performance under various conditions.