650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-8 package 650 V high and low side high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also available: 2ED21064S06J .Based on our SOI-technology , having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.