Significantly reduced RDS(on) with best-in-class OptiMOS™ 5 power MOSFET 25V in small PQFN 3.3x3.3mm package With the BSZ011NELS5I OptiMOS™ 5 power MOSFET, an additional device with integrated Schottky-like diode in high performance PQFN 3.3x3.3mm package is complementing Infineon’s high performance portfolio. It allows a further increase in system efficiency enabled by a significantly reduced RDS(on) in applications such as synchronous rectification in server and telecom SMPS. The outstanding electrical performance combined with a small PQFN 3.3x3.3mm package further enhances best-in-class power density and form factor improvement in the target applications.