The 5th Generation CoolSiC™ Automotive Schottky Diode embodies Infineon's advanced Silicon Carbide Schottky Barrier diode technology. Its compact design and thin wafer-based technology offer improved efficiency across all load conditions, with superior thermal characteristics and low figure of merit (Qc x Vf). Complementing Infineon’s IGBT and CoolMOS™ portfolio, it meets demanding application requirements in the 650V voltage class.