High Power DP4T Cross Switch The BGSX24MU16 RF CMOS switch is specifically designed for LTE and WCDMA quadruple antenna applications. This DP4T offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.65 to 1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX24MU16 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 2.0 x 2.0 mm2 and a maximum thickness of 0.59 mm.