BTT6200-1ENA, 200mΩ single channel Smart High-Side Power Switch, embedded in a PG-TDSO-8-31, Exposed Pad package, with protective functions & diagnosis The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is especially designed to drive lamps up to 1 x R10W 24 V or 1 x R5W 12 V, as well as LEDs in the harsh automotive environment.