The BGS12PN10 is a Single Pole Dual Throw (SPDT) high linearity, high power RF switch optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, CMOS or TTL compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12PN10 enables critical band combinations for UL (B1 + B3), (B2+B4), DL-CA (B4 + B12) and SV-LTE (B5 + B13). This device handles very high transmitting signal levels of up to 38 dBm, while at the same time exhibiting low losses to conserve battery power. Ultra high linearity devices have a significant impact on system sensitivity. For instance, 3 dBm more linearity in whole RF-front-end leads to 6 dB better signal-to-noise ratio. Hence, data rate speed is improved by up to 40% allowing a step e.g. from 20 Mbps (QAM16 4/5) to 33 Mbps (QAM64 4/5). The BGS12PN10 stands for Best-in-Class ISO and IL performance across all frequencies.