600 V three-phase gate driver IC with over current protection, enable and fault reporting The 600V three-phase gate driver IC for IGBTs and MOSFETs features 0.2A source, 0.35A sink current, 10.4V/9.4V UVLO, 500ns/530ns propagation delay, and a 0.46V VITRIP threshold in a SOIC-28 wide body package. It includes an integrated bootstrap diode (BSD) for improved negative transient voltage robustness up to -100V, with 50% lower level shift losses. Explore Infineon's SOI 600V three-phase gate driver options for enhanced performance.