100V, N-Ch, 9 mΩ max, Automotive MOSFET, D2PAK, Gen 10.7 The HEXFET® Power MOSFET is purpose-built for automotive applications, utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. With a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating, this design offers exceptional efficiency and reliability for automotive applications and a wide variety of other applications.