100 V, N-Ch, 4.7 mΩ max, Automotive MOSFET, D2PAK, Gen 10.7 Designed for automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features include 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These attributes make it an efficient and reliable choice for automotive and various other applications.