40 V, N-Ch, 10 mΩ max, Automotive MOSFET, Dual PQFN 5mm x 6mm, Trench MOSFET Designed for automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features include 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These attributes make it an efficient and reliable choice for automotive and various other applications.